AOI4286 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
On-state resistance: 68mΩ
Mounting: SMD
Case: TO251A
Drain current: 10A
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
On-state resistance: 68mΩ
Mounting: SMD
Case: TO251A
Drain current: 10A
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 117 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
93+ | 0.77 EUR |
117+ | 0.61 EUR |
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Technische Details AOI4286 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 4A/14A TO251A, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V.
Weitere Produktangebote AOI4286 nach Preis ab 0.37 EUR bis 0.99 EUR
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AOI4286 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A On-state resistance: 68mΩ Mounting: SMD Case: TO251A Drain current: 10A Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Gate charge: 2.8nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4286 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 4A/14A TO251A Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: TO-251A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V |
auf Bestellung 3684 Stücke: Lieferzeit 10-14 Tag (e) |
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AOI4286 | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-251A Tube |
Produkt ist nicht verfügbar |