AOK60B65H1 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.17mJ; Eon: 2.42mJ
Turn-off time: 268ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.88V
Collector current: 60A
Turn-off switching energy: 1.17mJ
Mounting: THT
Turn-on switching energy: 2.42mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 90nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 118ns
Kind of package: tube
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.17mJ; Eon: 2.42mJ
Turn-off time: 268ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.88V
Collector current: 60A
Turn-off switching energy: 1.17mJ
Mounting: THT
Turn-on switching energy: 2.42mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 90nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 118ns
Kind of package: tube
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.95 EUR |
14+ | 5.35 EUR |
19+ | 3.76 EUR |
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Technische Details AOK60B65H1 ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 650V 60A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 288 ns, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 39ns/153ns, Switching Energy: 2.42mJ (on), 1.17mJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 90 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 500 W.
Weitere Produktangebote AOK60B65H1 nach Preis ab 3.76 EUR bis 5.95 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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AOK60B65H1 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.17mJ; Eon: 2.42mJ Turn-off time: 268ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.88V Collector current: 60A Turn-off switching energy: 1.17mJ Mounting: THT Turn-on switching energy: 2.42mJ Collector-emitter voltage: 650V Power dissipation: 250W Gate charge: 90nC Pulsed collector current: 180A Type of transistor: IGBT Turn-on time: 118ns Kind of package: tube Case: TO247 |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK60B65H1 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 288 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 39ns/153ns Switching Energy: 2.42mJ (on), 1.17mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W |
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