AOSP66406 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
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Technische Details AOSP66406 ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8, Drain-source voltage: 40V, Drain current: 13A, On-state resistance: 6.6mΩ, Type of transistor: N-MOSFET, Power dissipation: 2W, Polarisation: unipolar, Gate charge: 8.5nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Mounting: SMD, Case: SO8, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote AOSP66406
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AOSP66406 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8 Drain-source voltage: 40V Drain current: 13A On-state resistance: 6.6mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 8.5nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |