AOSS21311C

AOSS21311C Alpha & Omega Semiconductor Inc.


AOSS21311C.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 4.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details AOSS21311C Alpha & Omega Semiconductor Inc.

Description: MOSFET P-CH 30V 4.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, SOT-23-3 Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V.

Weitere Produktangebote AOSS21311C nach Preis ab 0.18 EUR bis 0.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
AOSS21311C AOSS21311C Hersteller : Alpha & Omega Semiconductor aoss21311c.pdf Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.56 EUR
6000+ 0.45 EUR
Mindestbestellmenge: 3000
AOSS21311C AOSS21311C Hersteller : Alpha & Omega Semiconductor aoss21311c.pdf Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.56 EUR
6000+ 0.45 EUR
Mindestbestellmenge: 3000
AOSS21311C AOSS21311C Hersteller : Alpha & Omega Semiconductor Inc. AOSS21311C.pdf Description: MOSFET P-CH 30V 4.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 7710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
35+ 0.52 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 25
AOSS21311C AOSS21311C Hersteller : Alpha & Omega Semiconductor aoss21311c.pdf Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
AOSS21311C AOSS21311C Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOSS21311C.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
AOSS21311C AOSS21311C Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOSS21311C.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar