B1D08065KS BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Type of diode: Schottky rectifying
Case: TO220ISO
Mounting: THT
Kind of package: tube
Power dissipation: 32W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.73V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube
Type of diode: Schottky rectifying
Case: TO220ISO
Mounting: THT
Kind of package: tube
Power dissipation: 32W
Max. forward impulse current: 64A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.73V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.3 EUR |
35+ | 2.07 EUR |
38+ | 1.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details B1D08065KS BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube, Type of diode: Schottky rectifying, Case: TO220ISO, Mounting: THT, Kind of package: tube, Power dissipation: 32W, Max. forward impulse current: 64A, Leakage current: 10µA, Technology: SiC, Max. forward voltage: 1.73V, Load current: 8A, Semiconductor structure: single diode, Max. off-state voltage: 650V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1D08065KS nach Preis ab 1.89 EUR bis 2.3 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
B1D08065KS | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube Type of diode: Schottky rectifying Case: TO220ISO Mounting: THT Kind of package: tube Power dissipation: 32W Max. forward impulse current: 64A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.73V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
|