B1M080120HK BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Technology: SiC
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 241W
Kind of package: tube
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 149nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 19.41 EUR |
| 150+ | 18.66 EUR |
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Technische Details B1M080120HK BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W, Technology: SiC, Mounting: THT, Features of semiconductor devices: Kelvin terminal, Case: TO247-4, Power dissipation: 241W, Kind of package: tube, Pulsed drain current: 80A, Drain-source voltage: 1.2kV, Drain current: 27A, On-state resistance: 80mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 149nC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1M080120HK nach Preis ab 19.41 EUR bis 19.41 EUR
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B1M080120HK | Hersteller : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Technology: SiC Mounting: THT Features of semiconductor devices: Kelvin terminal Case: TO247-4 Power dissipation: 241W Kind of package: tube Pulsed drain current: 80A Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 149nC Kind of channel: enhanced Gate-source voltage: -5...20V |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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