B2D04065V BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Mounting: SMD
Case: SMB flat
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.65V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 32A
Leakage current: 5µA
Power dissipation: 10W
Anzahl je Verpackung: 1 Stücke
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Technische Details B2D04065V BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape, Mounting: SMD, Case: SMB flat, Kind of package: reel; tape, Type of diode: Schottky rectifying, Technology: SiC, Max. off-state voltage: 650V, Max. forward voltage: 1.65V, Load current: 4A, Semiconductor structure: single diode, Max. forward impulse current: 32A, Leakage current: 5µA, Power dissipation: 10W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D04065V
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| B2D04065V | Hersteller : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Mounting: SMD Case: SMB flat Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.65V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 32A Leakage current: 5µA Power dissipation: 10W |
Produkt ist nicht verfügbar |