B2D10065K1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 62W; TO220-2; tube
Mounting: THT
Max. forward impulse current: 85A
Leakage current: 20µA
Case: TO220-2
Kind of package: tube
Power dissipation: 62W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.7V
Load current: 10A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
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Technische Details B2D10065K1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 62W; TO220-2; tube, Mounting: THT, Max. forward impulse current: 85A, Leakage current: 20µA, Case: TO220-2, Kind of package: tube, Power dissipation: 62W, Type of diode: Schottky rectifying, Technology: SiC, Max. off-state voltage: 650V, Max. forward voltage: 1.7V, Load current: 10A, Semiconductor structure: single diode, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D10065K1
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B2D10065K1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 62W; TO220-2; tube Mounting: THT Max. forward impulse current: 85A Leakage current: 20µA Case: TO220-2 Kind of package: tube Power dissipation: 62W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.7V Load current: 10A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |