B2D10065Q BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8; reel,tape
Mounting: SMD
Max. forward impulse current: 70A
Leakage current: 20µA
Case: DFN8x8
Kind of package: reel; tape
Power dissipation: 54W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.67V
Load current: 10A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
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Technische Details B2D10065Q BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8; reel,tape, Mounting: SMD, Max. forward impulse current: 70A, Leakage current: 20µA, Case: DFN8x8, Kind of package: reel; tape, Power dissipation: 54W, Type of diode: Schottky rectifying, Technology: SiC, Max. off-state voltage: 650V, Max. forward voltage: 1.67V, Load current: 10A, Semiconductor structure: single diode, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D10065Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| B2D10065Q | Hersteller : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8; reel,tape Mounting: SMD Max. forward impulse current: 70A Leakage current: 20µA Case: DFN8x8 Kind of package: reel; tape Power dissipation: 54W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.67V Load current: 10A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |