B2D10120H1

B2D10120H1 BASiC SEMICONDUCTOR


B2D10120H1.pdf Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 62W; TO247-2; tube
Mounting: THT
Max. forward impulse current: 90A
Leakage current: 30µA
Case: TO247-2
Kind of package: tube
Power dissipation: 62W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
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Technische Details B2D10120H1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 62W; TO247-2; tube, Mounting: THT, Max. forward impulse current: 90A, Leakage current: 30µA, Case: TO247-2, Kind of package: tube, Power dissipation: 62W, Type of diode: Schottky rectifying, Technology: SiC, Max. off-state voltage: 1.2kV, Max. forward voltage: 2V, Load current: 10A, Semiconductor structure: single diode, Anzahl je Verpackung: 1 Stücke.

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B2D10120H1 B2D10120H1 Hersteller : BASiC SEMICONDUCTOR B2D10120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 62W; TO247-2; tube
Mounting: THT
Max. forward impulse current: 90A
Leakage current: 30µA
Case: TO247-2
Kind of package: tube
Power dissipation: 62W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Produkt ist nicht verfügbar