BAS16-HE3-18 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 75V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 9625 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 0.33 EUR |
| 72+ | 0.24 EUR |
| 133+ | 0.13 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.072 EUR |
| 2000+ | 0.06 EUR |
| 5000+ | 0.057 EUR |
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Technische Details BAS16-HE3-18 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 6 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 150mA, Supplier Device Package: SOT-23-3, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 75 V, Qualification: AEC-Q101.
Weitere Produktangebote BAS16-HE3-18 nach Preis ab 0.044 EUR bis 0.34 EUR
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auf Bestellung 13219 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS16-HE3-18 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |