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BCR162E6327 Infineon


INFNS11631-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon
PNP 50V 100mA 200MHz 200mW BCR162E6327HTSA1 BCR162E6327 Infineon TBCR162
Anzahl je Verpackung: 500 Stücke
auf Bestellung 150 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
500+0.059 EUR
Mindestbestellmenge: 500
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Technische Details BCR162E6327 Infineon

Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V, Supplier Device Package: PG-SOT23-3-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.

Weitere Produktangebote BCR162E6327 nach Preis ab 0.066 EUR bis 0.71 EUR

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Preis ohne MwSt
BCR 162 E6327 Hersteller : Infineon Technologies INFNS11631-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8013+0.066 EUR
Mindestbestellmenge: 8013
BCR 162 E6327 Hersteller : Infineon Technologies Infineon-BCR162-DS-v01_01-en-514399.pdf Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
auf Bestellung 595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.71 EUR
10+ 0.57 EUR
100+ 0.31 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
3000+ 0.12 EUR
9000+ 0.092 EUR
Mindestbestellmenge: 4
BCR162E6327 BCR162E6327 Hersteller : INFINEON TECHNOLOGIES BCR162.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BCR162E6327 BCR162E6327 Hersteller : Infineon Technologies INFNS11631-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
BCR162E6327 BCR162E6327 Hersteller : INFINEON TECHNOLOGIES BCR162.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Produkt ist nicht verfügbar