BCR162E6327 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Anzahl je Verpackung: 5 Stücke
auf Bestellung 675 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 675+ | 0.11 EUR |
| 820+ | 0.087 EUR |
| 3000+ | 0.051 EUR |
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Technische Details BCR162E6327 INFINEON TECHNOLOGIES
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V, Supplier Device Package: PG-SOT23-3-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
Weitere Produktangebote BCR162E6327 nach Preis ab 0.052 EUR bis 0.71 EUR
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BCR162E6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Mounting: SMD Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP |
auf Bestellung 675 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCR162E6327 | Hersteller : Infineon |
PNP 50V 100mA 200MHz 200mW BCR162E6327HTSA1 BCR162E6327 Infineon TBCR162 Anzahl je Verpackung: 500 Stücke |
auf Bestellung 2150 Stücke: Lieferzeit 7-14 Tag (e) |
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| BCR 162 E6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCR 162 E6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR |
auf Bestellung 595 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR162E6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
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