BGH40N120HF BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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Technische Details BGH40N120HF BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Collector-emitter voltage: 1.2kV, Collector current: 40A, Case: TO247-3, Gate-emitter voltage: ±20V, Mounting: THT, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BGH40N120HF
Foto | Bezeichnung | Hersteller | Beschreibung |
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BGH40N120HF | Hersteller : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |