BQ4014YMB-120 Texas Instruments
Hersteller: Texas Instruments
Description: IC NVSRAM 2MBIT PAR 32DIP MODULE
Packaging: Tube
Package / Case: 32-DIP Module (0.61", 15.49mm)
Mounting Type: Through Hole
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-DIP Module (18.42x52.96)
Part Status: Obsolete
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 256K x 8
Description: IC NVSRAM 2MBIT PAR 32DIP MODULE
Packaging: Tube
Package / Case: 32-DIP Module (0.61", 15.49mm)
Mounting Type: Through Hole
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-DIP Module (18.42x52.96)
Part Status: Obsolete
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 256K x 8
auf Bestellung 1327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
23+ | 21.94 EUR |
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Technische Details BQ4014YMB-120 Texas Instruments
Description: IC NVSRAM 2MBIT PAR 32DIP MODULE, Packaging: Tube, Package / Case: 32-DIP Module (0.61", 15.49mm), Mounting Type: Through Hole, Memory Size: 2Mbit, Memory Type: Non-Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 32-DIP Module (18.42x52.96), Part Status: Obsolete, Write Cycle Time - Word, Page: 120ns, Memory Interface: Parallel, Access Time: 120 ns, Memory Organization: 256K x 8.
Weitere Produktangebote BQ4014YMB-120
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BQ4014YMB-120 | Hersteller : TI | 08+; |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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BQ4014YMB-120 | Hersteller : Texas Instruments |
Description: IC NVSRAM 2MBIT PAR 32DIP MODULE Packaging: Tube Package / Case: 32-DIP Module (0.61", 15.49mm) Mounting Type: Through Hole Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-DIP Module (18.42x52.96) Part Status: Obsolete Write Cycle Time - Word, Page: 120ns Memory Interface: Parallel Access Time: 120 ns Memory Organization: 256K x 8 |
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