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BQ4014YMB-120

BQ4014YMB-120 Texas Instruments


BQ4014(Y)_Rev_Aug_2008.pdf Hersteller: Texas Instruments
Description: IC NVSRAM 2MBIT PAR 32DIP MODULE
Packaging: Tube
Package / Case: 32-DIP Module (0.61", 15.49mm)
Mounting Type: Through Hole
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-DIP Module (18.42x52.96)
Part Status: Obsolete
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 256K x 8
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+21.94 EUR
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Technische Details BQ4014YMB-120 Texas Instruments

Description: IC NVSRAM 2MBIT PAR 32DIP MODULE, Packaging: Tube, Package / Case: 32-DIP Module (0.61", 15.49mm), Mounting Type: Through Hole, Memory Size: 2Mbit, Memory Type: Non-Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 32-DIP Module (18.42x52.96), Part Status: Obsolete, Write Cycle Time - Word, Page: 120ns, Memory Interface: Parallel, Access Time: 120 ns, Memory Organization: 256K x 8.

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BQ4014YMB-120 Hersteller : TI BQ4014(Y)_Rev_Aug_2008.pdf 08+;
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BQ4014YMB-120 Hersteller : TI BQ4014(Y)_Rev_Aug_2008.pdf DIP 08+09+
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BQ4014YMB-120 BQ4014YMB-120 Hersteller : Texas Instruments BQ4014(Y)_Rev_Aug_2008.pdf Description: IC NVSRAM 2MBIT PAR 32DIP MODULE
Packaging: Tube
Package / Case: 32-DIP Module (0.61", 15.49mm)
Mounting Type: Through Hole
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-DIP Module (18.42x52.96)
Part Status: Obsolete
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 256K x 8
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