BSD214SNH6327XTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 20V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.14 EUR |
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Technische Details BSD214SNH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT363-6, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 3.7µA, Supplier Device Package: PG-SOT363-PO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V.
Weitere Produktangebote BSD214SNH6327XTSA1 nach Preis ab 0.11 EUR bis 1.47 EUR
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BSD214SNH6327XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 1.5A SOT363-6 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Supplier Device Package: PG-SOT363-PO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V |
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BSD214SNH6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363 Mounting: SMD Power dissipation: 0.5W Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 1.5A Drain-source voltage: 20V Case: SOT363 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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BSD214SNH6327XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 20V 1.5A Automotive 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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BSD214SNH6327XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 20V 1.5A Automotive 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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BSD214SNH6327XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 20V 1.5A Automotive 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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BSD214SNH6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363 Mounting: SMD Power dissipation: 0.5W Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 1.5A Drain-source voltage: 20V Case: SOT363 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |