BSF134N10NJ3GXUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Description: MOSFET N-CH 100V 9A/40A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.45 EUR |
10+ | 2.85 EUR |
100+ | 2.27 EUR |
500+ | 1.92 EUR |
1000+ | 1.63 EUR |
2000+ | 1.55 EUR |
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Technische Details BSF134N10NJ3GXUMA1 Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.2W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V.
Weitere Produktangebote BSF134N10NJ3GXUMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
BSF134N10NJ3GXUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 9A/40A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V Power Dissipation (Max): 2.2W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V |
auf Bestellung 4985 Stücke: Lieferzeit 10-14 Tag (e) |
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BSF134N10NJ3GXUMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 9A Automotive 7-Pin WDSON T/R |
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BSF134N10NJ3GXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 28W Mounting: SMD Case: CanPAK™ SJ; MG-WDSON-2 Power dissipation: 28W Technology: OptiMOS™ Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 40A On-state resistance: 13.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSF134N10NJ3GXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 28W Mounting: SMD Case: CanPAK™ SJ; MG-WDSON-2 Power dissipation: 28W Technology: OptiMOS™ Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 40A On-state resistance: 13.4mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |