BSL214NH6327XTSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Technische Details BSL214NH6327XTSA1 INFINEON TECHNOLOGIES
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6, Mounting: SMD, Case: TSOP6, Polarisation: unipolar, Technology: OptiMOS™ 2, Kind of channel: enhanced, Gate-source voltage: ±12V, Drain-source voltage: 20V, Drain current: 1.5A, On-state resistance: 0.25Ω, Type of transistor: N-MOSFET x2, Power dissipation: 0.5W, Anzahl je Verpackung: 1 Stücke.
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BSL214NH6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6 Mounting: SMD Case: TSOP6 Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 0.25Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.5W |
Produkt ist nicht verfügbar |