BSO150N03MDGXUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.8 EUR |
5000+ | 0.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSO150N03MDGXUMA1 Infineon Technologies
Description: INFINEON - BSO150N03MDGXUMA1 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 8 A, 8 A, 0.0125 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 8A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0125ohm, Verlustleistung, p-Kanal: 1.4W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0125ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.4W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote BSO150N03MDGXUMA1 nach Preis ab 0.76 EUR bis 1.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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BSO150N03MDGXUMA1 | Hersteller : Infineon Technologies | MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M |
auf Bestellung 9784 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO150N03MDGXUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 8A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Active |
auf Bestellung 11545 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO150N03MDGXUMA1 | Hersteller : INFINEON |
Description: INFINEON - BSO150N03MDGXUMA1 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 8 A, 8 A, 0.0125 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0125ohm Verlustleistung, p-Kanal: 1.4W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0125ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.4W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 5912 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO150N03MDGXUMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 8A 8-Pin DSO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO150N03MDGXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.3A Power dissipation: 1.56W Case: PG-DSO-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSO150N03MDGXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.3A Power dissipation: 1.56W Case: PG-DSO-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |