BSP149E6327
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Lieferzeit 21-28 Tag (e)
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Technische Details BSP149E6327
Description: MOSFET N-CH 200V 660MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 660mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 400µA, Supplier Device Package: PG-SOT223-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V.
Weitere Produktangebote BSP149E6327
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BSP149E6327 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BSP149 E6327 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 660MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 400µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
Produkt ist nicht verfügbar |