BSZ025N04LSATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 22A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V
Description: MOSFET N-CH 40V 22A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.96 EUR |
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Produktbewertung abgeben
Technische Details BSZ025N04LSATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 22A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V.
Weitere Produktangebote BSZ025N04LSATMA1 nach Preis ab 0.94 EUR bis 2.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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BSZ025N04LSATMA1 | Hersteller : Infineon Technologies | MOSFET MV POWER MOS |
auf Bestellung 18939 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ025N04LSATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 22A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V |
auf Bestellung 7814 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ025N04LSATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ025N04LSATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ025N04LSATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Polarisation: unipolar Power dissipation: 69W Type of transistor: N-MOSFET On-state resistance: 2.5mΩ Drain current: 40A Technology: OptiMOS™ Kind of channel: enhanced Drain-source voltage: 40V Gate-source voltage: ±20V Case: PG-TSDSON-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ025N04LSATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Polarisation: unipolar Power dissipation: 69W Type of transistor: N-MOSFET On-state resistance: 2.5mΩ Drain current: 40A Technology: OptiMOS™ Kind of channel: enhanced Drain-source voltage: 40V Gate-source voltage: ±20V Case: PG-TSDSON-8 |
Produkt ist nicht verfügbar |