BSZ050N03LSGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSZ050N03LSGATMA1 Infineon Technologies
Description: INFINEON - BSZ050N03LSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.0042 ohm, PG-TSDSON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 40A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1V, euEccn: NLR, Verlustleistung: 50W, Bauform - Transistor: PG-TSDSON, Anzahl der Pins: 8Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0042ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote BSZ050N03LSGATMA1 nach Preis ab 0.49 EUR bis 1.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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BSZ050N03LSGATMA1 | Hersteller : Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 |
auf Bestellung 9390 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ050N03LSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 16A/40A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V |
auf Bestellung 9777 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ050N03LSGATMA1 | Hersteller : INFINEON |
Description: INFINEON - BSZ050N03LSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.0042 ohm, PG-TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: PG-TSDSON Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0042ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 19100 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ050N03LSGATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 16A 8-Pin TSDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ050N03LSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ050N03LSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |