BTS115ANKSA1

BTS115ANKSA1 Infineon Technologies


BTS115A%20%20II.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
64+7.36 EUR
Mindestbestellmenge: 64
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Technische Details BTS115ANKSA1 Infineon Technologies

Description: MOSFET N-CH 50V 15.5A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V.

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BTS115ANKSA1 Hersteller : ROCHESTER ELECTRONICS BTS115A%20%20II.pdf Description: ROCHESTER ELECTRONICS - BTS115ANKSA1 - BTS115 POWER FIELD-EFFECT TRANSISTOR, 1
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
BTS115ANKSA1 BTS115ANKSA1 Hersteller : Infineon Technologies bts115a.pdf Trans MOSFET N-CH 50V 15.5A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
BTS115ANKSA1 BTS115ANKSA1 Hersteller : Infineon Technologies BTS115A%20%20II.pdf Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
Produkt ist nicht verfügbar