BXE40T1K2HFSD BRIDGELUX
Hersteller: BRIDGELUXCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 278W; TO247-3
Type of transistor: IGBT
Collector current: 40A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Turn-on time: 110ns
Turn-off time: 342ns
Collector-emitter voltage: 1.2kV
Power dissipation: 278W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 239nC
Anzahl je Verpackung: 1 Stücke
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Technische Details BXE40T1K2HFSD BRIDGELUX
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 278W; TO247-3, Type of transistor: IGBT, Collector current: 40A, Case: TO247-3, Mounting: THT, Gate-emitter voltage: ±20V, Pulsed collector current: 160A, Turn-on time: 110ns, Turn-off time: 342ns, Collector-emitter voltage: 1.2kV, Power dissipation: 278W, Features of semiconductor devices: integrated anti-parallel diode, Kind of package: tube, Gate charge: 239nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXE40T1K2HFSD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BXE40T1K2HFSD | Hersteller : BRIDGELUX |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 278W; TO247-3 Type of transistor: IGBT Collector current: 40A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 160A Turn-on time: 110ns Turn-off time: 342ns Collector-emitter voltage: 1.2kV Power dissipation: 278W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 239nC |
Produkt ist nicht verfügbar |