BXW3M1K7H BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 3A, Pulsed drain current: 12A, Power dissipation: 69W, Case: TO247-3, Gate-source voltage: -3...20V, On-state resistance: 1.69Ω, Mounting: THT, Gate charge: 15nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.