BYC30-600P,127 WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
auf Bestellung 7905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.12 EUR |
| 50+ | 2.5 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.86 EUR |
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Technische Details BYC30-600P,127 WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30, Voltage Coupled to Current - Reverse Leakage @ Vr: 600.
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BYC30-600P,127 | Hersteller : WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD59; TO220AC Max. forward voltage: 1.38V |
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