Technische Details BYG21KHE3_A/I Vishay
Description: DIODE AVAL 800V 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote BYG21KHE3_A/I
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| BYG21KHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVAL 800V 1.5A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BYG21KHE3_A/I | Hersteller : Vishay General Semiconductor |
Rectifiers 1.5A,800V,120NS,AVAL AEC-Q101 Qualified |
Produkt ist nicht verfügbar |