BYM12-200-E3/97 Vishay General Semiconductor
auf Bestellung 5000 Stücke:
Lieferzeit 337-341 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
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Technische Details BYM12-200-E3/97 Vishay General Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO213AB; Ufmax: 1V; Ifsm: 30A, Mounting: SMD, Kind of package: reel; tape, Type of diode: rectifying, Features of semiconductor devices: glass passivated; ultrafast switching, Case: DO213AB, Capacitance: 20pF, Max. off-state voltage: 200V, Max. forward voltage: 1V, Load current: 1A, Semiconductor structure: single diode, Reverse recovery time: 50ns, Max. forward impulse current: 30A, Leakage current: 50µA, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote BYM12-200-E3/97
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BYM12-200-E3/97 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 1A DO213AB |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| BYM12-200-E3/97 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO213AB; Ufmax: 1V; Ifsm: 30A Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Case: DO213AB Capacitance: 20pF Max. off-state voltage: 200V Max. forward voltage: 1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 30A Leakage current: 50µA Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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BYM12-200-E3/97 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO213AB |
Produkt ist nicht verfügbar |
|
| BYM12-200-E3/97 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO213AB; Ufmax: 1V; Ifsm: 30A Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Case: DO213AB Capacitance: 20pF Max. off-state voltage: 200V Max. forward voltage: 1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 30A Leakage current: 50µA |
Produkt ist nicht verfügbar |