BYWB29-100-E3/81 Vishay General Semiconductor
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.22 EUR |
10+ | 1.81 EUR |
100+ | 1.4 EUR |
500+ | 1.18 EUR |
800+ | 0.95 EUR |
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Technische Details BYWB29-100-E3/81 Vishay General Semiconductor
Description: DIODE GEN PURP 100V 8A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote BYWB29-100-E3/81
Foto | Bezeichnung | Hersteller | Beschreibung |
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BYWB29-100-E3/81 | Hersteller : Vishay | Diode Switching 100V 8A 3-Pin(2+Tab) TO-263AB T/R |
Produkt ist nicht verfügbar |
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BYWB29-100-E3/81 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |