CSD13385F5T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 12V 4.3A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 900mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 6 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.68 EUR |
| 500+ | 0.59 EUR |
| 1250+ | 0.58 EUR |
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Technische Details CSD13385F5T Texas Instruments
Description: MOSFET N-CH 12V 4.3A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 900mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 6 V.
Weitere Produktangebote CSD13385F5T nach Preis ab 0.6 EUR bis 1.09 EUR
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CSD13385F5T | Hersteller : Texas Instruments |
MOSFET 12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
auf Bestellung 4057 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13385F5T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 12V 4.3A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 900mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 6 V |
auf Bestellung 22565 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD13385F5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3 Kind of package: reel; tape On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Drain current: 7.1A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 41A Case: PICOSTAR3 Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD13385F5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3 Kind of package: reel; tape On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Drain current: 7.1A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 41A Case: PICOSTAR3 Mounting: SMD |
Produkt ist nicht verfügbar |