CUHS10F60,H3F

CUHS10F60,H3F Toshiba Semiconductor and Storage


CUHS10F60_datasheet_en_20190925.pdf?did=61122&prodName=CUHS10F60 Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
auf Bestellung 2999 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
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Technische Details CUHS10F60,H3F Toshiba Semiconductor and Storage

Description: DIODE SCHOTTKY 60V 1A US2H, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, Flat Lead, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 130pF @ 0V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: US2H, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 60 V, Current - Reverse Leakage @ Vr: 40 µA @ 60 V.

Weitere Produktangebote CUHS10F60,H3F nach Preis ab 0.22 EUR bis 0.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CUHS10F60,H3F CUHS10F60,H3F Hersteller : Toshiba CUHS10F60_datasheet_en_20190925-1916495.pdf Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF
auf Bestellung 23680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.77 EUR
10+ 0.59 EUR
100+ 0.33 EUR
500+ 0.22 EUR
Mindestbestellmenge: 4
CUHS10F60,H3F CUHS10F60,H3F Hersteller : Toshiba Semiconductor and Storage CUHS10F60_datasheet_en_20190925.pdf?did=61122&prodName=CUHS10F60 Description: DIODE SCHOTTKY 60V 1A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
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