DDTA114WE-7-F Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: TRANS PREBIAS PNP 150MW SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.093 EUR |
| 15000+ | 0.079 EUR |
| 30000+ | 0.074 EUR |
| 75000+ | 0.069 EUR |
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Technische Details DDTA114WE-7-F Diodes Incorporated
Description: TRANS PREBIAS PNP 150MW SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V, Supplier Device Package: SOT-523, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
Weitere Produktangebote DDTA114WE-7-F nach Preis ab 0.19 EUR bis 0.62 EUR
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DDTA114WE-7-F | Hersteller : Diodes Incorporated |
Description: TRANS PREBIAS PNP 150MW SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 77350 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTA114WE-7-F | Hersteller : Diodes Inc |
Trans Digital BJT PNP 50V 100mA 150mW 3-Pin SOT-523 T/R |
Produkt ist nicht verfügbar |
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DDTA114WE-7-F | Hersteller : Diodes Incorporated |
Bipolar Transistors - Pre-Biased 150MW 10K 4.7K |
Produkt ist nicht verfügbar |