DI150N04PQ Diotec Semiconductor
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.47 EUR |
10+ | 4.28 EUR |
100+ | 2.55 EUR |
500+ | 2.53 EUR |
1000+ | 2.46 EUR |
2500+ | 2.16 EUR |
5000+ | 2.04 EUR |
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Technische Details DI150N04PQ Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0014OHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.45mOhm @ 75A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DI150N04PQ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DI150N04PQ | Hersteller : Diotec Semiconductor |
Description: MOSFET PWRQFN 5X6 40V 0.0014OHM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 75A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DI150N04PQ | Hersteller : Diotec Semiconductor |
Description: MOSFET PWRQFN 5X6 40V 0.0014OHM Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 75A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |