DI4A7P06SQ2 Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET SO8 P -60V -4.7A 0.075OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DI4A7P06SQ2 Diotec Semiconductor
Description: MOSFET SO8 P -60V -4.7A 0.075OHM, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V, Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DI4A7P06SQ2 nach Preis ab 0.47 EUR bis 1.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DI4A7P06SQ2 | Hersteller : Diotec Semiconductor |
Description: MOSFET SO8 P -60V -4.7A 0.075OHM Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DI4A7P06SQ2 | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, SO-8, -60V, -4.7A, 150C, P |
auf Bestellung 3958 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DI4A7P06SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; Idm: -30A; 3W; SO8 Case: SO8 Polarisation: unipolar Power dissipation: 3W Kind of package: reel; tape Drain-source voltage: -60V Gate charge: 8.5nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Pulsed drain current: -30A On-state resistance: 0.12Ω Drain current: -4.7A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
DI4A7P06SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; Idm: -30A; 3W; SO8 Case: SO8 Polarisation: unipolar Power dissipation: 3W Kind of package: reel; tape Drain-source voltage: -60V Gate charge: 8.5nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Pulsed drain current: -30A On-state resistance: 0.12Ω Drain current: -4.7A |
Produkt ist nicht verfügbar |