DIT050N06 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 90A
Power dissipation: 85W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 90A
Power dissipation: 85W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 828 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
132+ | 0.54 EUR |
151+ | 0.47 EUR |
175+ | 0.41 EUR |
185+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DIT050N06 DIOTEC SEMICONDUCTOR
Description: MOSFET TO220AB N 60V 0.014OHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V.
Weitere Produktangebote DIT050N06 nach Preis ab 0.39 EUR bis 1.94 EUR
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DIT050N06 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Pulsed drain current: 90A Power dissipation: 85W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.2mm |
auf Bestellung 828 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT050N06 | Hersteller : Diotec Semiconductor |
Description: MOSFET TO220AB N 60V 0.014OHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V |
auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT050N06 | Hersteller : Diotec Semiconductor | MOSFET MOSFET, TO-220AB, 60V, 50A, 175C, N |
auf Bestellung 744 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT050N06 | Hersteller : Diotec Semiconductor | DIT050N06 |
auf Bestellung 515 Stücke: Lieferzeit 14-21 Tag (e) |