DIT090N06 Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET TO220AB N 65V 0.0057OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.9 EUR |
| 50+ | 1.53 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.84 EUR |
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Technische Details DIT090N06 Diotec Semiconductor
Description: MOSFET TO220AB N 65V 0.0057OHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V.
Weitere Produktangebote DIT090N06 nach Preis ab 0.62 EUR bis 17.88 EUR
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DIT090N06 | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, TO-220AB, 65V, 90A, 175C, N |
auf Bestellung 929 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT090N06 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 62A Pulsed drain current: 310A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT090N06 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 62A Pulsed drain current: 310A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.2mm |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| DIT090N06 | Hersteller : Diotec Electronics |
Trans MOSFET N-CH 65V 90A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT090N06 Produktcode: 188342 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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DIT090N06 | Hersteller : Diotec Semiconductor |
Trans MOSFET N-CH 65V 90A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |