auf Bestellung 190000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.047 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG2301L-13 Diodes Zetex
Description: MOSFET P-CH 20V 3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V.
Weitere Produktangebote DMG2301L-13 nach Preis ab 0.045 EUR bis 0.53 EUR
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DMG2301L-13 | Hersteller : Diodes Zetex |
 P-CHANNEL ENHANCEMENT MODE MOSFET |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2301L-13 | Hersteller : Diodes Zetex |
P-CHANNEL ENHANCEMENT MODE MOSFET |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2301L-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V |
auf Bestellung 190000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2301L-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS |
auf Bestellung 19055 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2301L-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V |
auf Bestellung 196434 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2301L-13 | Hersteller : Diodes Inc |
P-CHANNEL ENHANCEMENT MODE MOSFET |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2301L-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 1.5W; SOT23 Mounting: SMD On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Drain current: -1A Drain-source voltage: -20V Gate charge: 5.5nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMG2301L-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 1.5W; SOT23 Mounting: SMD On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Drain current: -1A Drain-source voltage: -20V Gate charge: 5.5nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A |
Produkt ist nicht verfügbar |