auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.12 EUR |
| 9000+ | 0.1 EUR |
| 24000+ | 0.097 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG3407SSN-7 Diodes Zetex
Description: MOSFET P-CH 30V 4A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SC-59-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V.
Weitere Produktangebote DMG3407SSN-7 nach Preis ab 0.11 EUR bis 0.62 EUR
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DMG3407SSN-7 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3407SSN-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3407SSN-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3407SSN-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 4A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3407SSN-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS |
auf Bestellung 5503 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3407SSN-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 4A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.1A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V |
auf Bestellung 14616 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3407SSN-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R |
auf Bestellung 50921 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3407SSN-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 4A 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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| DMG3407SSN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59 Mounting: SMD Case: SC59 Kind of package: reel; tape Power dissipation: 1.1W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -3.6A On-state resistance: 72mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMG3407SSN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59 Mounting: SMD Case: SC59 Kind of package: reel; tape Power dissipation: 1.1W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -3.6A On-state resistance: 72mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |