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DMG4413LSS-13

DMG4413LSS-13 Diodes Incorporated


ds31754.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 10.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V
auf Bestellung 50000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.63 EUR
5000+ 0.6 EUR
12500+ 0.57 EUR
Mindestbestellmenge: 2500
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Technische Details DMG4413LSS-13 Diodes Incorporated

Description: MOSFET P-CH 30V 10.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V.

Weitere Produktangebote DMG4413LSS-13 nach Preis ab 0.65 EUR bis 1.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMG4413LSS-13 DMG4413LSS-13 Hersteller : Diodes Incorporated DIOD_S_A0006917977_1-2512852.pdf MOSFET MOSFET,P-CHANNEL
auf Bestellung 12760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.49 EUR
10+ 1.19 EUR
100+ 0.95 EUR
500+ 0.8 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 2
DMG4413LSS-13 DMG4413LSS-13 Hersteller : Diodes Incorporated ds31754.pdf Description: MOSFET P-CH 30V 10.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V
auf Bestellung 52358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.51 EUR
15+ 1.24 EUR
100+ 0.97 EUR
500+ 0.82 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 12
DMG4413LSS-13 DMG4413LSS-13 Hersteller : Diodes Inc ds31754.pdf Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R
Produkt ist nicht verfügbar
DMG4413LSS-13 DMG4413LSS-13 Hersteller : DIODES INCORPORATED ds31754.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 10.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMG4413LSS-13 DMG4413LSS-13 Hersteller : Diodes Zetex ds31754.pdf Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R
Produkt ist nicht verfügbar
DMG4413LSS-13 DMG4413LSS-13 Hersteller : Diodes Zetex ds31754.pdf Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R
Produkt ist nicht verfügbar
DMG4413LSS-13 DMG4413LSS-13 Hersteller : Diodes Zetex ds31754.pdf Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R
Produkt ist nicht verfügbar
DMG4413LSS-13 DMG4413LSS-13 Hersteller : DIODES INCORPORATED ds31754.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 10.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar