DMHC4035LSDQ-13 Diodes Zetex
auf Bestellung 112500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.65 EUR |
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Technische Details DMHC4035LSDQ-13 Diodes Zetex
Description: MOSFET 2N/2P-CH 40V 4.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMHC4035LSDQ-13 nach Preis ab 0.68 EUR bis 1.83 EUR
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DMHC4035LSDQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N/2P-CH 40V 4.5A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 177500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC4035LSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N/2P-CH 40V 4.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 179769 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC4035LSDQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
auf Bestellung 21765 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC4035LSDQ-13 | Hersteller : Diodes Zetex |
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Automotive AEC-Q101 |
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DMHC4035LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 3.5/-2.9A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 58/100mΩ Mounting: SMD Gate charge: 12.5/11.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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DMHC4035LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 3.5/-2.9A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 58/100mΩ Mounting: SMD Gate charge: 12.5/11.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |