auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.28 EUR |
| 10+ | 1.13 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN1006UCA6-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W, Kind of package: reel; tape, Drain-source voltage: 12V, Drain current: 13.2A, On-state resistance: 9mΩ, Type of transistor: N-MOSFET, Power dissipation: 2.4W, Polarisation: unipolar, Gate charge: 35.2nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 80A, Mounting: SMD, Case: X3-DSN2718-6, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMN1006UCA6-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN1006UCA6-7 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 12V 16.6A 6-Pin X3-DSN T/R |
Produkt ist nicht verfügbar |
||
| DMN1006UCA6-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W Kind of package: reel; tape Drain-source voltage: 12V Drain current: 13.2A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 35.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Mounting: SMD Case: X3-DSN2718-6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
 |
DMN1006UCA6-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X3-DSN2718-6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 |
Produkt ist nicht verfügbar |
|
|
|
DMN1006UCA6-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X3-DSN2718-6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 |
Produkt ist nicht verfügbar |
|
| DMN1006UCA6-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W Kind of package: reel; tape Drain-source voltage: 12V Drain current: 13.2A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 35.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Mounting: SMD Case: X3-DSN2718-6 |
Produkt ist nicht verfügbar |