DMN1025UFDB-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 23.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 23.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2625 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 400+ | 0.18 EUR |
| 450+ | 0.16 EUR |
| 510+ | 0.14 EUR |
| 540+ | 0.13 EUR |
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Technische Details DMN1025UFDB-7 DIODES INCORPORATED
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 35A, Case: U-DFN2020-6, Drain-source voltage: 12V, Drain current: 5.5A, On-state resistance: 38mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 1.7W, Polarisation: unipolar, Gate charge: 23.1nC, Kind of channel: enhanced, Gate-source voltage: ±10V, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote DMN1025UFDB-7 nach Preis ab 0.13 EUR bis 0.65 EUR
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DMN1025UFDB-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W Mounting: SMD Kind of package: reel; tape Pulsed drain current: 35A Case: U-DFN2020-6 Drain-source voltage: 12V Drain current: 5.5A On-state resistance: 38mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.7W Polarisation: unipolar Gate charge: 23.1nC Kind of channel: enhanced Gate-source voltage: ±10V |
auf Bestellung 2625 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1025UFDB-7 | Hersteller : Diodes Incorporated | MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W |
auf Bestellung 2083 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1025UFDB-7 | Hersteller : Diodes Inc |
 Dual N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |