DMN1053UCP4-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 12V 2.7A X3DSN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.34W
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X3-DSN0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN1053UCP4-7 Diodes Incorporated
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, CSPBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V, Power Dissipation (Max): 1.34W, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: X3-DSN0808-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V.
Weitere Produktangebote DMN1053UCP4-7 nach Preis ab 0.25 EUR bis 0.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN1053UCP4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V Power Dissipation (Max): 1.34W Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: X3-DSN0808-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V |
auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
| DMN1053UCP4-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFETBVDSS: 8V-24V |
auf Bestellung 30789 Stücke: Lieferzeit 10-14 Tag (e) |
|