DMN10H120SE-13 Diodes Zetex
auf Bestellung 975000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.27 EUR |
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Technische Details DMN10H120SE-13 Diodes Zetex
Description: MOSFET N-CH 100V 3.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V.
Weitere Produktangebote DMN10H120SE-13 nach Preis ab 0.29 EUR bis 1.02 EUR
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DMN10H120SE-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 100V 3.6A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V |
auf Bestellung 977500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 3.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V |
auf Bestellung 978275 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SE-13 | Hersteller : Diodes Incorporated |
MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC |
auf Bestellung 3739 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SE-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 3.6A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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DMN10H120SE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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DMN10H120SE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |