auf Bestellung 1668000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2005LP4K-7 Diodes Zetex
Description: MOSFET N-CH 20V 200MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 100µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V.
Weitere Produktangebote DMN2005LP4K-7 nach Preis ab 0.091 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN2005LP4K-7 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
DMN2005LP4K-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
DMN2005LP4K-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 200MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V |
auf Bestellung 1692000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
DMN2005LP4K-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
DMN2005LP4K-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
DMN2005LP4K-7 | Hersteller : Diodes Incorporated |
MOSFET 20V 300mA |
auf Bestellung 71596 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
DMN2005LP4K-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 200MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V |
auf Bestellung 1697672 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
 |
DMN2005LP4K-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
| DMN2005LP4K-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.35A Power dissipation: 0.4W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||||
| DMN2005LP4K-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.35A Power dissipation: 0.4W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |