DMN2015UFDE-7 Diodes Incorporated
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.27 EUR |
| 9000+ | 0.25 EUR |
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Technische Details DMN2015UFDE-7 Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V.
Weitere Produktangebote DMN2015UFDE-7 nach Preis ab 0.33 EUR bis 0.88 EUR
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DMN2015UFDE-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 20V 10.5A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2015UFDE-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 10.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2015UFDE-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Pulsed drain current: 80A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 45.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN2015UFDE-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 10.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V |
Produkt ist nicht verfügbar |
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| DMN2015UFDE-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Pulsed drain current: 80A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 45.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |