DMP1022UFDF-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 12V 9.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
auf Bestellung 291000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP1022UFDF-7 Diodes Incorporated
Description: MOSFET P-CH 12V 9.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V.
Weitere Produktangebote DMP1022UFDF-7 nach Preis ab 0.25 EUR bis 0.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP1022UFDF-7 | Hersteller : Diodes Incorporated |
MOSFET 12V P-Ch Enh Mode 19Vgs 2712pF 28.6nC |
auf Bestellung 48140 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMP1022UFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 12V 9.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V |
auf Bestellung 294315 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMP1022UFDF-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 12V 9.5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| DMP1022UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
| DMP1022UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |