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DMT10H010LSS-13

DMT10H010LSS-13 Diodes Incorporated


DMT10H010LSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 125000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.95 EUR
5000+ 0.91 EUR
12500+ 0.87 EUR
Mindestbestellmenge: 2500
Produktrezensionen
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Technische Details DMT10H010LSS-13 Diodes Incorporated

Description: MOSFET N-CH 100V 11.5A/29.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V.

Weitere Produktangebote DMT10H010LSS-13 nach Preis ab 0.99 EUR bis 2.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT10H010LSS-13 DMT10H010LSS-13 Hersteller : Diodes Incorporated DMT10H010LSS.pdf Description: MOSFET N-CH 100V 11.5A/29.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 127130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.31 EUR
10+ 1.88 EUR
100+ 1.47 EUR
500+ 1.24 EUR
1000+ 1.01 EUR
Mindestbestellmenge: 8
DMT10H010LSS-13 DMT10H010LSS-13 Hersteller : Diodes Incorporated DMT10H010LSS-3214395.pdf MOSFET MOSFET BVDSS
auf Bestellung 4851 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.32 EUR
10+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
2500+ 0.99 EUR
Mindestbestellmenge: 2
DMT10H010LSS-13 DMT10H010LSS-13 Hersteller : Diodes Zetex 692977993386747dmt10h010lss.pdf Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H010LSS-13 DMT10H010LSS-13 Hersteller : Diodes Zetex 692977993386747dmt10h010lss.pdf Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H010LSS-13 DMT10H010LSS-13 Hersteller : Diodes Zetex 692977993386747dmt10h010lss.pdf Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H010LSS-13 DMT10H010LSS-13 Hersteller : Diodes Inc 692977993386747dmt10h010lss.pdf Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H010LSS-13 DMT10H010LSS-13 Hersteller : DIODES INCORPORATED DMT10H010LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 14.5mΩ
Drain current: 9.2A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H010LSS-13 DMT10H010LSS-13 Hersteller : DIODES INCORPORATED DMT10H010LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 14.5mΩ
Drain current: 9.2A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Produkt ist nicht verfügbar