DMT4002LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 262500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.05 EUR |
| 5000+ | 1 EUR |
| 12500+ | 0.95 EUR |
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Technische Details DMT4002LPS-13 Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V, Power Dissipation (Max): 2.3W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMT4002LPS-13 nach Preis ab 0.97 EUR bis 2.69 EUR
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DMT4002LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 2.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 264780 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4002LPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS 31V-40V |
auf Bestellung 575 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4002LPS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT4002LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0013 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.3W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0013ohm |
auf Bestellung 2470 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT4002LPS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT4002LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0013 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.3W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0013ohm |
auf Bestellung 2470 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT4002LPS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 40V 100A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMT4002LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Case: PowerDI5060-8 Kind of package: reel; tape Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 3.1mΩ Drain current: 100A Drain-source voltage: 40V Gate charge: 116.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT4002LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Case: PowerDI5060-8 Kind of package: reel; tape Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 3.1mΩ Drain current: 100A Drain-source voltage: 40V Gate charge: 116.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A |
Produkt ist nicht verfügbar |