Type-UX;-;-8.jpg "DMT47M2SFVW-7")
DMT47M2SFVW-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.41 EUR |
| 6000+ | 0.38 EUR |
| 10000+ | 0.36 EUR |
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Technische Details DMT47M2SFVW-7 Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V.
Weitere Produktangebote DMT47M2SFVW-7 nach Preis ab 0.37 EUR bis 1.07 EUR
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DMT47M2SFVW-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 2K |
auf Bestellung 3520 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2SFVW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V |
auf Bestellung 112000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT47M2SFVW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W Mounting: SMD Drain-source voltage: 40V Drain current: 12.3A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 196A Case: PowerDI3333-8 Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMT47M2SFVW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W Mounting: SMD Drain-source voltage: 40V Drain current: 12.3A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 196A Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |