DN2530N8-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 300V 200MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 1.07 EUR |
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Technische Details DN2530N8-G Microchip Technology
Description: MOSFET N-CH 300V 200MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote DN2530N8-G nach Preis ab 0.87 EUR bis 1.7 EUR
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DN2530N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3 Mounting: SMD Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.2A Case: SOT89-3 Drain-source voltage: 300V On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.74W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 375 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2530N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3 Mounting: SMD Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.2A Case: SOT89-3 Drain-source voltage: 300V On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.74W Polarisation: unipolar Kind of package: reel; tape |
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DN2530N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 300V 200MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 5180 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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DN2530N8-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |